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About 80% of SiC products depend on imports, and there is ample room for domestic substitution

About 80% of SiC products depend on imports, and there is ample room for domestic substitution

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  • Time of issue:2021-07-02
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(Summary description)According to reports, new energy vehicles are rapidly introducing silicon carbide (SiC) technology.

A few days ago, Tesla released the ModelS Plaid model. The car's silicon carbide inverter has helped it become the fastest mass-produced model in the world at this stage. So far, Tesla has adopted SiC technology in three models.

About 80% of SiC products depend on imports, and there is ample room for domestic substitution

(Summary description)According to reports, new energy vehicles are rapidly introducing silicon carbide (SiC) technology.

A few days ago, Tesla released the ModelS Plaid model. The car's silicon carbide inverter has helped it become the fastest mass-produced model in the world at this stage. So far, Tesla has adopted SiC technology in three models.

  • Categories:Announcement
  • Author:
  • Origin:
  • Time of issue:2021-07-02
  • Views:0
Information

According to reports, new energy vehicles are rapidly introducing silicon carbide (SiC) technology.

A few days ago, Tesla released the ModelS Plaid model. The car's silicon carbide inverter has helped it become the fastest mass-produced model in the world at this stage. So far, Tesla has adopted SiC technology in three models.

Domestically, BYD’s Han EV high-performance four-wheel drive version is the first domestic model to use SiC technology. By 2023, BYD’s electric vehicles will fully replace silicon-based IGBTs with SiC automotive power semiconductors. In addition, the first pure electric car released by Weilai this year will also be equipped with a second-generation electric drive platform using SiC modules. #Silicon carbide#

According to Yole's forecast, the global silicon carbide power device market will be about US$500-600 million in 2020, accounting for about 3-4% of the entire power semiconductor device market. It is estimated that by 2022, the market size of silicon carbide power devices is expected to exceed 1 billion. Dollar.

Silicon carbide is a third-generation semiconductor material. Compared with traditional silicon-based materials, silicon carbide has a higher critical breakdown electric field, good heat dissipation characteristics, and a higher critical temperature. It is especially suitable for high-voltage, high-temperature, high-frequency, and high-speed power electronic systems.

The research and development of silicon carbide power devices began in the 1990s and has now become the mainstream of research and development of new power semiconductor devices.

Compared with gallium nitride, silicon carbide has higher thermal conductivity and more mature technology. It is suitable for high temperature and large power fields above 1200V. More high-voltage, high-temperature, high-frequency, high-radiation and high-power devices are produced. Extreme environmental applications such as new energy vehicles, new energy power generation, rail transit, aerospace, national defense and military industries have irreplaceable advantages.

The silicon carbide industry chain mainly includes several links of single crystal materials, epitaxial materials, devices, modules and applications.

Due to the high cost ratio of the substrate in the device, enterprises that master the substrate process and production capacity have an advantage in the competition.

The competitive landscape of the silicon carbide industry

At present, the global silicon carbide industry pattern presents a tripartite pattern of the United States, Europe, and Japan. The United States is the only one. 70%-80% of global silicon carbide semiconductor production comes from American companies. Europe owns silicon carbide substrates, epitaxy, devices and applications. Complete industrial chain; Japan is a leader in equipment and module development.

According to CASA statistics, the major global SiC device manufacturers include Infineon, Cree, Rohm, and ST. The four companies together account for 90% of the market share.

Both Cree of the United States and Rohm of Japan have the ability to produce the entire industrial chain of silicon carbide from substrates, epitaxial wafers to devices. The silicon carbide substrates produced are for personal use except for external sales.

International companies ensure future supply by locking in substrate production capacity in advance. For example, Cree has signed long-term supply agreements with major European and American silicon carbide downstream companies such as Infineon and STMicroelectronics. Three-quarters of the company's materials business has signed long-term agreements.

my country's silicon carbide products mainly rely on imports, and there is a lot of room for domestic substitution

At present, about 80% of domestic SiC products rely on imports, and there is ample room for domestic substitution.

At present, the efficiency of domestic crystal growth furnaces is less than one-fifth of Cree. At present, Tianke Heda and Shandong Tianyue have begun large-scale production of 6-inch substrates or construction of production lines.

The epitaxial wafer market is dominated by IDM companies such as Mitsubishi, Infineon and STMicroelectronics. In China, Hantian Tiancheng and Dongguan Tianyu are purely epitaxial wafers, both of which can supply 4-6 inch epitaxial wafers. The 13th and 55th CETC also have in-house epitaxial wafer production departments.

In terms of devices, STMicroelectronics, ON Semiconductor, Infineon and Rohm are all important suppliers. China Resources Micro’s first domestic 6-inch commercial SiC production line has been officially mass-produced, and Sanan Optoelectronics plans to invest 16 billion yuan in silicon carbide. The Hunan subsidiary with a full industrial chain layout will also start construction in 2020.

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